BSS131H6327XTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Voltage | 240V |
| Power Dissipation-Max | 360mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| Turn On Delay Time | 3.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 14 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 56μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 110mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 10V |
| Rise Time | 3.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 13.7 ns |
| Continuous Drain Current (ID) | 100mA |
| Threshold Voltage | 1.4V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 240V |
| Drain to Source Breakdown Voltage | 240V |
| Dual Supply Voltage | 240V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 1.4 V |
| Feedback Cap-Max (Crss) | 4.2 pF |
| Height | 1.1mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet