BSS119NH6327XTSA1
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 2.7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 13μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 20.9pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Rise Time | 3.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 18.8 ns |
| Turn-Off Delay Time | 7 ns |
| Continuous Drain Current (ID) | 190mA |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Gate to Source Voltage (Vgs) | 20V |
| Mount | Surface Mount |
| Max Dual Supply Voltage | 100V |
| Mounting Type | Surface Mount |
| Drain-source On Resistance-Max | 6Ohm |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Drain to Source Breakdown Voltage | 100V |
| Transistor Element Material | SILICON |
| Max Junction Temperature (Tj) | 150°C |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Height | 1.1mm |
| Published | 2002 |
| Series | OptiMOS™ |
| Length | 2.9mm |
| JESD-609 Code | e3 |
| Width | 1.3mm |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Lead Free | Lead Free |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
See Relate Datesheet