BSP318SL6327HTSA1
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | SIPMOS® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
See Relate Datesheet