BSP315PH6327XTSA1
| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | -60V |
| Dual Supply Voltage | -60V |
| Recovery Time | 46 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.5 V |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 6.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-SOT223-4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1999 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 800m Ω @ 1.17A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 160μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.17A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 1.17A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -60V |
| Drain-source On Resistance-Max | 0.8Ohm |
See Relate Datesheet