| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.56W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.56W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 9.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 100μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 7.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 36A |
| Avalanche Energy Rating (Eas) | 97 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |