BSN20,215
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | compliant |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 830mW Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 173mA Ta |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 0.173A |
| Drain-source On Resistance-Max | 20Ohm |
| DS Breakdown Voltage-Min | 50V |
| Feedback Cap-Max (Crss) | 8 pF |
| RoHS Status | RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
See Relate Datesheet