BSH111BKR
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 302mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 302mW |
| Turn On Delay Time | 8.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 210mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.5nC @ 4.5V |
| Factory Lead Time | 4 Weeks |
| Rise Time | 8.4ns |
| Contact Plating | Tin |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Mount | Surface Mount |
| Vgs (Max) | ±10V |
| Mounting Type | Surface Mount |
| Fall Time (Typ) | 4.8 ns |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Turn-Off Delay Time | 12.6 ns |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 210mA |
| Threshold Voltage | 1V |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 10V |
| Operating Temperature | -55°C~150°C TJ |
| Drain-source On Resistance-Max | 4Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Packaging | Cut Tape (CT) |
| Max Junction Temperature (Tj) | 150°C |
| Published | 2014 |
| Ambient Temperature Range High | 150°C |
| Part Status | Active |
| Feedback Cap-Max (Crss) | 7 pF |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free | Lead Free |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
See Relate Datesheet