BSC520N15NS3GATMA1
| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Reach Compliance Code | not_compliant |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 57W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 57W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 52m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 35μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 21A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 21A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.052Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Nominal Vgs | 3 V |
| Height | 1.1mm |
| Length | 5.35mm |
| Width | 6.1mm |
| REACH SVHC | No SVHC |
| Factory Lead Time | 26 Weeks |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Lead Free | Lead Free |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
See Relate Datesheet