BSC090N03MSGATMA1

BSC090N03MSGATMA1

Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC090N03MSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 552
  • Description: Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP (Kg)

Details

Tags

Parameters
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 32W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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