BSC030P03NS3GAUMA1
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | -25.4A |
| Gate to Source Voltage (Vgs) | 25V |
| Max Dual Supply Voltage | -30V |
| Drain-source On Resistance-Max | 0.0046Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 345 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Lead Free | Contains Lead |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 27 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 345μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 25.4A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Rise Time | 105ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 98 ns |
See Relate Datesheet