BSB008NE2LXXUMA1
| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | OptiMOS™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Silver/Nickel (Ag/Ni) |
| Additional Feature | ULTRA LOW RESISTANCE |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 12.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 0.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 16000pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 46A Ta 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 343nC @ 10V |
| Rise Time | 47.2ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 32.4 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 46A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 180A |
| Drain-source On Resistance-Max | 0.0008Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| DS Breakdown Voltage-Min | 25V |
| Avalanche Energy Rating (Eas) | 600 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet