BLP10H603Z
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Voltage - Rated | 104V |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Frequency | 860MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PDSO-N12 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 15mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| JEDEC-95 Code | MO-229 |
| Gain | 22.8dB |
| DS Breakdown Voltage-Min | 104V |
| Power - Output | 2.5W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Package / Case | 12-VDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 12 |
See Relate Datesheet