BFG 235 E6327
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | BUILT IN EMITTER BALLASTING RESISTOR |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Case Connection | COLLECTOR |
| Power - Max | 2W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 200mA 8V |
| Gain | 12.5dB |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Current - Collector (Ic) (Max) | 300mA |
| Transition Frequency | 5500MHz |
| Frequency - Transition | 5.5GHz |
| Power Dissipation-Max (Abs) | 2W |
| Highest Frequency Band | L B |
| Collector-Base Capacitance-Max | 3.6pF |
| Noise Figure (dB Typ @ f) | 1.7dB @ 900MHz |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet