BDV65
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-218-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | DARLINGTON |
| Case Connection | COLLECTOR |
| Power - Max | 125W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 4V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 12A |
| Transition Frequency | 60MHz |
| Frequency - Transition | 60MHz |
| Power Dissipation-Max (Abs) | 125W |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet