BD435S

BD435S

BD435S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BD435S
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 237
  • Description: BD435S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
hFE Min 50
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 4A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD435
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
See Relate Datesheet

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