| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Rise Time-Max | 15ns |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 77W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 74ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 12A |
| Power Dissipation-Max (Abs) | 77W |
| Turn On Time | 38 ns |
| Test Condition | 400V, 6A, 47 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
| Turn Off Time-Nom (toff) | 127 ns |
| IGBT Type | Trench |
| Gate Charge | 19.5nC |
| Current - Collector Pulsed (Icm) | 18A |
| Td (on/off) @ 25°C | 27ns/75ns |
| Switching Energy | 56μJ (on), 122μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 22ns |
| RoHS Status | RoHS Compliant |