AUIRFU3607
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 96 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 56A |
| Drain-source On Resistance-Max | 0.009Ohm |
| DS Breakdown Voltage-Min | 75V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 11 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 140W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 140W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3070pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Rise Time | 110ns |
| Drain to Source Voltage (Vdss) | 75V |
See Relate Datesheet