| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | D2PAK |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 99W Tc |
| Element Configuration | Single |
| Power Dissipation | 99W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3183pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 123A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
| Rise Time | 77ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 43 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 123A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.183nF |
| Drain to Source Resistance | 2.6mOhm |
| Rds On Max | 3.3 mΩ |
| Nominal Vgs | 3 V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |