AUIRF7732S2TR
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SC |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 41W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 41W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.95m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 123ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 37 ns |
| Continuous Drain Current (ID) | 14A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 55A |
| Drain-source On Resistance-Max | 0.00695Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 220A |
| Avalanche Energy Rating (Eas) | 45 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet