AUIRF3205
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 200W Tc |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
| Rise Time | 101ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 75A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 55V |
| Height | 9.02mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet