| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | ATPAK (2 leads+tab) |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 28A, 10V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 55A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
| Rise Time | 200ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 300 ns |
| Turn-Off Delay Time | 450 ns |
| Continuous Drain Current (ID) | 55A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |