| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Voltage - Rated | 1000V |
| Subcategory | FET General Purpose Power |
| Current Rating | 13A |
| Frequency | 40.68MHz |
| Number of Elements | 1 |
| Configuration | Single |
| Drain to Source Voltage (Vdss) | 1kV |
| Transistor Type | N-Channel |
| Continuous Drain Current (ID) | 13A |
| Gain | 16dB |
| Power - Output | 300W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 357W |
| Voltage - Test | 150V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 24 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Packaging | Tube |
| Published | 1998 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |