| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 weeks ago) |
| Package / Case | T-1 |
| Surface Mount | YES |
| Packaging | Tube |
| Published | 1998 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated | 1000V |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.5kW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Current Rating | 30A |
| Frequency | 27.12MHz |
| Pin Count | 6 |
| JESD-30 Code | S-CDFP-F6 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time (Typ) | 13 ns |
| Transistor Type | N-Channel |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 30V |
| Gain | 17dB |
| Power - Output | 750W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 250V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |