APTGT30H170T3G

APTGT30H170T3G

Trans IGBT Module N-CH 1.7KV 45A 32-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT30H170T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 139
  • Description: Trans IGBT Module N-CH 1.7KV 45A 32-Pin Case SP-3 (Kg)

Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 210W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 210W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 45A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 2.5nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 850 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
See Relate Datesheet

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