APTGT200H120G

APTGT200H120G

IGBT MODULE 1200V 280A 890W SP6


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT200H120G
  • Package: SP6
  • Datasheet: PDF
  • Stock: 793
  • Description: IGBT MODULE 1200V 280A 890W SP6 (Kg)

Details

Tags

Parameters
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 890W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 890W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 280A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 14nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 200A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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