APTGL60DH120T3G
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Number of Pins | 16 |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 280W |
| Number of Elements | 1 |
| Configuration | Asymmetrical Bridge |
| Element Configuration | Dual |
| Power - Max | 280W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 80A |
| Current - Collector Cutoff (Max) | 250μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 2.77nF |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 50A |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2.77nF @ 25V |
| VCEsat-Max | 2.25 V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet