APTGF165A60D1G

APTGF165A60D1G

IGBT MODULE 600V 230A 781W D1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF165A60D1G
  • Package: D1
  • Datasheet: PDF
  • Stock: 545
  • Description: IGBT MODULE 600V 230A 781W D1 (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D1
Number of Pins 7
Supplier Device Package D1
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 781W
Configuration Half Bridge
Element Configuration Dual
Power - Max 781W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 230A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 230A
Input Capacitance 9nF
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 200A
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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