APTCV60TLM99T3G

APTCV60TLM99T3G

POWER MODULE IGBT QUAD 600V SP3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTCV60TLM99T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 531
  • Description: POWER MODULE IGBT QUAD 600V SP3 (Kg)

Details

Tags

Parameters
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 32
Additional Feature AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Terminal Position DUAL
Terminal Form UNSPECIFIED
Pin Count 32
Number of Elements 2
Configuration Three Level Inverter - IGBT, FET
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 1.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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