| Parameters | |
|---|---|
| Voltage - Rated DC | 500V | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | SINGLE | 
| Current Rating | 75A | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 1040W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 1.04kW | 
| Turn On Delay Time | 45 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 75m Ω @ 37A, 10V | 
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 11600pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 75A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 290nC @ 10V | 
| Rise Time | 55ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±30V | 
| Fall Time (Typ) | 39 ns | 
| Turn-Off Delay Time | 120 ns | 
| Continuous Drain Current (ID) | 75A | 
| Gate to Source Voltage (Vgs) | 30V | 
| Drain-source On Resistance-Max | 0.075Ohm | 
| Radiation Hardening | No | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 22 Weeks | 
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-247-3 Variant | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tube | 
| Published | 1997 | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| Terminal Finish | PURE MATTE TIN | 
| Additional Feature | HIGH RELIABILITY |