APT45GR65BSCD10
| Parameters | |
|---|---|
| Input Type | Standard |
| Power - Max | 543W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 118A |
| Reverse Recovery Time | 80 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Test Condition | 433V, 45A, 4.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| IGBT Type | NPT |
| Gate Charge | 203nC |
| Current - Collector Pulsed (Icm) | 224A |
| Td (on/off) @ 25°C | 15ns/100ns |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 22 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 543W |
See Relate Datesheet