 
    | Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks | 
| Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-247-3 | 
| Manufacturer Package Identifier | TO-247 (B) | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Bulk | 
| Published | 1997 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Technology | SiCFET (Silicon Carbide) | 
| Terminal Position | SINGLE | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| JESD-30 Code | R-PSFM-T3 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 273W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 273W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 10 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V | 
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) | 
| Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 1000V | 
| Current - Continuous Drain (Id) @ 25°C | 41A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V | 
| Drain to Source Voltage (Vdss) | 1200V | 
| Drive Voltage (Max Rds On,Min Rds On) | 20V | 
| Vgs (Max) | +25V, -10V | 
| Turn-Off Delay Time | 32 ns | 
| Continuous Drain Current (ID) | 41A | 
| Threshold Voltage | 1.7V | 
| Gate to Source Voltage (Vgs) | 25V | 
| Drain to Source Breakdown Voltage | 1.2kV | 
| Avalanche Energy Rating (Eas) | 2500 mJ | 
| Max Junction Temperature (Tj) | 175°C | 
| Height | 25.96mm | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free |