APT38F80B2
| Parameters | |
|---|---|
| Factory Lead Time | 33 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | POWER MOS 8™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1040W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.04kW |
| Case Connection | DRAIN |
| Turn On Delay Time | 46 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8070pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 41A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Rise Time | 65ns |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 200 ns |
| Continuous Drain Current (ID) | 41A |
| JEDEC-95 Code | TO-247AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.24Ohm |
| DS Breakdown Voltage-Min | 800V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet