APT36GA60BD15
| Parameters | |
|---|---|
| Factory Lead Time | 29 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Series | POWER MOS 8™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 290W |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 290W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 65A |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 29 ns |
| Test Condition | 400V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 262 ns |
| IGBT Type | PT |
| Gate Charge | 18nC |
| Current - Collector Pulsed (Icm) | 109A |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 307μJ (on), 254μJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet