APT13003DU-G1
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2016 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Max Power Dissipation | 20W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 250mA, 1A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Emitter Base Voltage (VEBO) | 9V |
| Continuous Collector Current | 1.5A |
| VCEsat-Max | 0.4 V |
| Turn Off Time-Max (toff) | 3350ns |
| Turn On Time-Max (ton) | 700ns |
| Fall Time-Max (tf) | 350ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet