APT102GA60B2
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 183A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 64 ns |
| Test Condition | 400V, 62A, 4.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
| Turn Off Time-Nom (toff) | 389 ns |
| IGBT Type | PT |
| Gate Charge | 294nC |
| Current - Collector Pulsed (Icm) | 307A |
| Td (on/off) @ 25°C | 28ns/212ns |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Series | POWER MOS 8™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 780W |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 780W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
See Relate Datesheet