| Parameters | |
|---|---|
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-PowerWDFN | 
| Number of Pins | 8 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2011 | 
| Pbfree Code | yes | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 5 | 
| ECCN Code | EAR99 | 
| Subcategory | FET General Purpose Power | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | NO LEAD | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Pin Count | 8 | 
| JESD-30 Code | S-PDSO-N5 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 6.2W Ta 83W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 83W | 
| Case Connection | DRAIN | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 8.5m Ω @ 20A, 10V | 
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 2435pF @ 30V | 
| Current - Continuous Drain (Id) @ 25°C | 20A Ta 50A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V | 
| Drain to Source Voltage (Vdss) | 60V | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 
| Vgs (Max) | ±20V | 
| Continuous Drain Current (ID) | 50A | 
| Gate to Source Voltage (Vgs) | 20V | 
| DS Breakdown Voltage-Min | 60V | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free |