AON6414A
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSMD, Flat Leads |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.3W Ta 31W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 31W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 20A, 10V |
See Relate Datesheet