| Parameters | |
|---|---|
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2009 | 
| Part Status | Not For New Designs | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| Subcategory | FET General Purpose Power | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | SINGLE | 
| Terminal Form | GULL WING | 
| JESD-30 Code | R-PSSO-G2 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 2.1W Ta 60W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 60W | 
| Case Connection | DRAIN | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 20m Ω @ 20A, 10V | 
| Vgs(th) (Max) @ Id | 2.7V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 30V | 
| Current - Continuous Drain (Id) @ 25°C | 7A Ta 37A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V | 
| Drain to Source Voltage (Vdss) | 60V | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 
| Vgs (Max) | ±20V | 
| Continuous Drain Current (ID) | 37A | 
| Gate to Source Voltage (Vgs) | 20V | 
| Drain-source On Resistance-Max | 0.025Ohm | 
| Pulsed Drain Current-Max (IDM) | 60A | 
| DS Breakdown Voltage-Min | 60V | 
| Avalanche Energy Rating (Eas) | 45 mJ | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |