| Parameters | |
|---|---|
| Continuous Drain Current (ID) | -40A | 
| Threshold Voltage | -1.7V | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Gate to Source Voltage (Vgs) | 20V | 
| Number of Pins | 3 | 
| Drain-source On Resistance-Max | 0.022Ohm | 
| Drain to Source Breakdown Voltage | -40V | 
| Transistor Element Material | SILICON | 
| Pulsed Drain Current-Max (IDM) | 50A | 
| Max Junction Temperature (Tj) | 175°C | 
| Operating Temperature | -55°C~175°C TJ | 
| Height | 2.6mm | 
| Radiation Hardening | No | 
| Packaging | Tape & Reel (TR) | 
| RoHS Status | ROHS3 Compliant | 
| Published | 2008 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | SINGLE | 
| Terminal Form | GULL WING | 
| JESD-30 Code | R-PSSO-G2 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 2.5W Ta 62.5W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 2.5W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 10 ns | 
| FET Type | P-Channel | 
| Rds On (Max) @ Id, Vgs | 22m Ω @ 12A, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 20V | 
| Current - Continuous Drain (Id) @ 25°C | 40A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | 
| Factory Lead Time | 18 Weeks | 
| Drain to Source Voltage (Vdss) | 40V | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 
| Vgs (Max) | ±20V | 
| Mount | Surface Mount | 
| Turn-Off Delay Time | 38 ns | 
| Mounting Type | Surface Mount |