| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | 
| Number of Pins | 8 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2010 | 
| Part Status | Not For New Designs | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 8 | 
| ECCN Code | EAR99 | 
| Additional Feature | ULTRA-LOW RESISTANCE | 
| Subcategory | FET General Purpose Power | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Pin Count | 8 | 
| Qualification Status | Not Qualified | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 3.1W Ta | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 3.1W | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 14m Ω @ 11.6A, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 15V | 
| Current - Continuous Drain (Id) @ 25°C | 10.5A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | 
| Drain to Source Voltage (Vdss) | 30V | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 
| Vgs (Max) | ±20V | 
| Continuous Drain Current (ID) | 10.5A | 
| Gate to Source Voltage (Vgs) | 20V | 
| DS Breakdown Voltage-Min | 30V | 
| RoHS Status | ROHS3 Compliant |