AO3415
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Turn-Off Delay Time | 19 ps |
| Continuous Drain Current (ID) | -30A |
| Threshold Voltage | 8mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.054Ohm |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Breakdown Voltage | -20V |
| Number of Pins | 3 |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Feedback Cap-Max (Crss) | 110 pF |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Height | 1.25mm |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 13 ps |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 4A, 4.5V |
See Relate Datesheet