| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2006 | 
| Part Status | Not For New Designs | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 1.4W Ta | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 1.4W | 
| Turn On Delay Time | 2.5 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4.2A, 4.5V | 
| Vgs(th) (Max) @ Id | 1V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 436pF @ 10V | 
| Current - Continuous Drain (Id) @ 25°C | 3A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V | 
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V | 
| Vgs (Max) | ±8V | 
| Turn-Off Delay Time | 21 ns | 
| Continuous Drain Current (ID) | 3A | 
| Threshold Voltage | 700mV | 
| Gate to Source Voltage (Vgs) | 8V | 
| Drain Current-Max (Abs) (ID) | 4.2A | 
| Drain-source On Resistance-Max | 0.05Ohm | 
| Drain to Source Breakdown Voltage | 20V | 
| Max Junction Temperature (Tj) | 150°C | 
| Height | 1.25mm | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |