| Parameters | |
|---|---|
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Cut Tape (CT) | 
| Published | 2011 | 
| Pbfree Code | yes | 
| Part Status | Not For New Designs | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 1.4W Ta | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 1.4W | 
| Turn On Delay Time | 6.5 ns | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 44m Ω @ 4.3A, 10V | 
| Vgs(th) (Max) @ Id | 1.3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 15V | 
| Current - Continuous Drain (Id) @ 25°C | 4A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 4.5V | 
| Drain to Source Voltage (Vdss) | 30V | 
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V | 
| Vgs (Max) | ±12V | 
| Turn-Off Delay Time | 41 ns | 
| Continuous Drain Current (ID) | -4A | 
| Threshold Voltage | -900mV | 
| Gate to Source Voltage (Vgs) | 12V | 
| Drain Current-Max (Abs) (ID) | 4A | 
| Drain-source On Resistance-Max | 0.05Ohm | 
| Drain to Source Breakdown Voltage | -30V | 
| Max Junction Temperature (Tj) | 150°C | 
| Height | 1.25mm | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |