| Parameters | |
|---|---|
| Pin Count | 3 |
| Drain to Source Breakdown Voltage | 1.5kV |
| Number of Elements | 1 |
| Pulsed Drain Current-Max (IDM) | 4A |
| Power Dissipation-Max | 2W Ta 35W Tc |
| Height | 15.87mm |
| Element Configuration | Single |
| Length | 10.16mm |
| Width | 4.7mm |
| Operating Mode | ENHANCEMENT MODE |
| Radiation Hardening | No |
| Power Dissipation | 2W |
| RoHS Status | ROHS3 Compliant |
| Case Connection | ISOLATED |
| Lead Free | Lead Free |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13 Ω @ 1A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Factory Lead Time | 21 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 10V |
| Mounting Type | Through Hole |
| Rise Time | 37ns |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Drain to Source Voltage (Vdss) | 1500V |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | 150°C TJ |
| Vgs (Max) | ±20V |
| Packaging | Tube |
| Fall Time (Typ) | 59 ns |
| Published | 1997 |
| JESD-609 Code | e3 |
| Turn-Off Delay Time | 152 ns |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Continuous Drain Current (ID) | 2A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| JEDEC-95 Code | TO-220AB |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Gate to Source Voltage (Vgs) | 20V |