| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7 Ω @ 2A, 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Rise Time | 80ns |
| Drain to Source Voltage (Vdss) | 1500V |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 230 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 7Ohm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |