2SK1317-E
| Parameters | |
|---|---|
| Power Dissipation-Max | 100W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 100W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12 Ω @ 2A, 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
| Rise Time | 70ns |
| Drain to Source Voltage (Vdss) | 1500V |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 2.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 7A |
| Nominal Vgs | 4 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PRSS0004ZE-A |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
See Relate Datesheet