| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 7A |
| Voltage - Rated DC | 160V |
| Drain to Source Breakdown Voltage | 160V |
| Technology | MOSFET (Metal Oxide) |
| Height | 22.1mm |
| Terminal Position | SINGLE |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Current Rating | 7A |
| Lead Free | Lead Free |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 100W Tc |
| Factory Lead Time | 16 Weeks |
| Contact Plating | Copper, Tin |
| Operating Mode | ENHANCEMENT MODE |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Power Dissipation | 100W |
| Package / Case | TO-3P-3, SC-65-3 |
| Case Connection | SOURCE |
| Number of Pins | 3 |
| Turn On Delay Time | 180 ns |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PRSS0004ZE-A |
| FET Type | N-Channel |
| Operating Temperature | 150°C TJ |
| Transistor Application | SWITCHING |
| Packaging | Tube |
| Published | 2005 |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Pbfree Code | yes |
| Current - Continuous Drain (Id) @ 25°C | 7A Ta |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Vgs (Max) | ±15V |
| Number of Terminations | 3 |
| Turn-Off Delay Time | 60 ns |
| ECCN Code | EAR99 |
| Continuous Drain Current (ID) | 7A |
| Subcategory | FET General Purpose Power |
| Gate to Source Voltage (Vgs) | 15V |