2SJ687-ZK-E1-AY
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta 36W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 36 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 10A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| Rise Time | 220ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 310 ns |
| Turn-Off Delay Time | 270 ns |
| Continuous Drain Current (ID) | 20A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 0.02A |
| Drain-source On Resistance-Max | 0.02Ohm |
| DS Breakdown Voltage-Min | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet