2SJ162-E
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -160V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Current Rating | -7A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 100W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A Ta |
| Drain to Source Voltage (Vdss) | 160V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 15V |
| Drain Current-Max (Abs) (ID) | 7A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet