| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 125°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOW NOISE |
| Subcategory | Other Transistors |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | unknown |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 150mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 7 GHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA 10V |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 11dB |
| Transition Frequency | 7000MHz |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 80 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1.15pF |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| RoHS Status | RoHS Compliant |